Adiabatic transport in the quantum Hall regime: Comparison between transport and scanning force microscopy investigations

نویسندگان

  • Franck DAHLEM
  • FRANCK DAHLEM
چکیده

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

شبیه سازی اثر بی نظمی و میدان مغناطیسی بر ترابرد کوانتومی نانوساختارهای دو بعدی مدل شده با تقریب تنگابست

 In recent years, semiconductor nanostructures have become the model systems of choice for investigation of electrical conduction on short length scales. Quantum transport is studied in a two dimensional electron gas because of the combination of a large Fermi wavelength and large mean free path. In the present work, a numerical method is implemented in order to contribute to the understanding ...

متن کامل

Piezoelectricity: Quantized Charge Transport Driven by Adiabatic Deformations

We study the (zero temperature) quantum piezoelectric response of Harper-like models with broken inversion symmetry. The charge transport in these models is related to topological invariants (Chern numbers). We show that there are arbitrarily small periodic modulations of the atomic positions that lead to nonzero charge transport for the electrons. The Harper model can be interpreted as a tight...

متن کامل

Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study

A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism. Quantum confinement increases the effective Schottky barrier height (SBH). (100) orientation provides lower effective Schottky barrier height in compa...

متن کامل

Scanning impedance microscopy (SIM): A novel approach for AC transport imaging

Scanning Impedance Microscopy (SIM) is one of the novel scanning probe microscopy (SPM) techniques, which has been developed to taking image from sample surface, providing quantitative information with high lateral resolution on the interface capacitance, and investigating the local capacitance–voltage (C–V) behavior of the interface and AC transport properties. The SIM is an ordinary AFM equip...

متن کامل

Scanning impedance microscopy (SIM): A novel approach for AC transport imaging

Scanning Impedance Microscopy (SIM) is one of the novel scanning probe microscopy (SPM) techniques, which has been developed to taking image from sample surface, providing quantitative information with high lateral resolution on the interface capacitance, and investigating the local capacitance–voltage (C–V) behavior of the interface and AC transport properties. The SIM is an ordinary AFM equip...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2009